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MJE13005 Data Sheet PDF ( 数据手册 , 数据表 )

零件编号 MJE13005
描述 NPN SILICON POWER TRANSISTOR
制造商 Central Semiconductor
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MJE13005 数据手册, 描述, 功能
DATA SHEET
MJE13004
MJE13005
NPN SILICON
POWER TRANSISTOR
JEDEC TO-220 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high
speed power switching applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
MJE13004
Collector-Emitter Voltage
VCEO
300
Collector-Emitter Voltage
VCEV
600
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Base Current
IB
Peak Base Current
IBM
Power Dissipation (TA=25°C)
PD
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
MJE13005
400
700
9.0
4.0
8.0
2.0
4.0
2.0
75
-65 to +150
62.5
1.67
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
ICEV
ICEV
ICEV
ICEV
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
VCE=600V, VBE(OFF)=1.5V (MJE13004)
VCE=600V, VBE(OFF)=1.5V, TC=100°C (MJE13004)
VCE=700V, VBE(OFF)=1.5V (MJE13005)
VCE=700V, VBE(OFF)=1.5V, TC=100°C (MJE13005)
VEB=9.0V
IC=10mA (MJE13004)
IC=10mA (MJE13005)
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=4.0A, IB=1.0A
IC=2.0A, IB=0.5A, TC=100°C
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=2.0A, IB=0.5A, TC=100°C
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=2.0A
300
400
10
8.0
1.0
5.0
1.0
5.0
1.0
0.5
0.6
1.0
1.0
1.2
1.6
1.5
60
40
UNITS
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
(SEE REVERSE SIDE)
R0



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