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PDF ( 数据手册 , 数据表 ) SiHF840L
| 零件编号 | SiHF840L | ||
| 描述 | Power MOSFET ( Transistor ) | ||
| 制造商 | Vishay | ||
| LOGO |  |
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1 Page
Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
63
9.3
32
Single
0.85
I2PAK
(TO-262)
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I2PAK (TO-262) is a power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance.
The I2PAK (TO-262) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W.
I2PAK (TO-262)
SiHF840L-GE3
IRF840LPbF
SiHF840L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
TC = 100 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 20
8.0
5.1
32
1.0
510
8.0
13
125
50
3.5
- 55 to + 150
300d
UNIT
V
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
1
 
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
(Datum A)
4 L1
34
E
4
A
A
AB
c2
D5
H
CC
123
L2
BB
Detail A
2xe
2 x b2
2xb
0.010 M A M B
Plating
(c)
A
c
± 0.004 M B
5
b1, b3
Base
metal
c1 5
Gauge
plane
0° to 8°
H
B
Seating plane
L3 L L4
A1
Detail “A”
Rotated 90° CW
scale 8:1
E
D1 4
Lead tip
(b, b2)
Section B - B and C - C
Scale: none
E1
View A - A
4
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1 6.86
- 0.270 -
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
b
0.51
0.99
0.020
0.039
E1 6.22
- 0.245 -
b1
0.51
0.89
0.020
0.035
e 2.54 BSC
0.100 BSC
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
c
0.38
0.74
0.015
0.029
L1 - 1.65 - 0.066
c1
0.38
0.58
0.015
0.023
L2 - 1.78 - 0.070
c2
1.14
1.65
0.045
0.065
L3 0.25 BSC
0.010 BSC
D
8.38
9.65
0.330
0.380
L4
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
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| 页数 | 9 页 | ||
| 下载 | [ SiHF840L.PDF 数据手册 ] | ||
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