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PDF ( 数据手册 , 数据表 ) SiHF630S
| 零件编号 | SiHF630S | ||
| 描述 | Power MOSFET ( Transistor ) | ||
| 制造商 | Vishay | ||
| LOGO |  |
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1 Page
Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
43
7.0
23
Single
0.40
D2PAK (TO-263)
K
DS
G
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630S-GE3
SiHF630STRL-GE3a
Lead (Pb)-free
IRF630SPbF
SiHF630S-E3
IRF630STRLPbFa
SiHF630STL-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
TC = 25 °C
VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dtc
EAS
IAR
EAR
PD
dV/dt
D2PAK (TO-263)
SiHF630STRR-GE3a
IRF630STRRPbFa
SiHF630STR-E3a
LIMIT
200
± 20
9.0
5.7
36
0.59
0.025
250
9.0
7.4
74
3.0
5.0
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
(Datum A)
4 L1
34
E
4
A
A
AB
c2
D5
H
CC
123
L2
BB
Detail A
2xe
2 x b2
2xb
0.010 M A M B
Plating
(c)
A
c
± 0.004 M B
5
b1, b3
Base
metal
c1 5
Gauge
plane
0° to 8°
H
B
Seating plane
L3 L L4
A1
Detail “A”
Rotated 90° CW
scale 8:1
E
D1 4
Lead tip
(b, b2)
Section B - B and C - C
Scale: none
E1
View A - A
4
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1 6.86
- 0.270 -
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
b
0.51
0.99
0.020
0.039
E1 6.22
- 0.245 -
b1
0.51
0.89
0.020
0.035
e 2.54 BSC
0.100 BSC
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
c
0.38
0.74
0.015
0.029
L1 - 1.65 - 0.066
c1
0.38
0.58
0.015
0.023
L2 - 1.78 - 0.070
c2
1.14
1.65
0.045
0.065
L3 0.25 BSC
0.010 BSC
D
8.38
9.65
0.330
0.380
L4
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
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| 页数 | 9 页 | ||
| 下载 | [ SiHF630S.PDF 数据手册 ] | ||
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