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PDF ( 数据手册 , 数据表 ) STP12NM50FP

零件编号 STP12NM50FP
描述 N-CHANNEL MOSFET
制造商 STMicroelectronics
LOGO STMicroelectronics LOGO 



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STP12NM50FP 数据手册, 描述, 功能
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30- 12A TO-220/FP/D2/I2PAK
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550V
550V
550V
550V
RDS(on)
<0.35
<0.35
<0.35
<0.35
ID
12A
12A
12A
12A
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% avalanche tested
Low gate input resistance
Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB12NM50T4
STB12NM50-1
STP12NM50
STP12NM50FP
Marking
B12NM50
B12NM50
P12NM50
P12NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 11
1/17
www.st.com
17







STP12NM50FP pdf, 数据表
Electrical characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Figure 13. Source-drain diode forward
characteristics
8/17







STP12NM50FP equivalent, schematic
Revision history
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
6 Revision history
Table 7. Revision history
Date
Revision
14-Mar-2004
8
15-Feb-2006
9
05-Apr-2006
10
27-Jul-2006
11
Changes
Preliminary version
New voltage value on first page at tjmax.
Inserted ecopack indication
New template, no content change
16/17










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