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PDF ( 数据手册 , 数据表 ) UPA2465T1Q
| 零件编号 | UPA2465T1Q | ||
| 描述 | MOS FIELD EFFECT TRANSISTOR | ||
| 制造商 | Renesas | ||
| LOGO |  |
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1 Page
μ PA2465T1Q
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0190EJ0100
Rev.1.00
Dec 06, 2010
Description
The μ PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
Features
• 2.5 V drive available
• Low on-state resistance
⎯ RDS(on)1 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
⎯ RDS(on)2 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
⎯ RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A)
⎯ RDS(on)4 = 24.5 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
Ordering Information
Part No.
μ PA2465T1Q-E1-AX ∗1
LEAD PLATING
Ni/Pd/Au
PACKING
8 mm embossed taping
Package
8-pin HUSON (2720)
3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
N-CHANNEL
Drain to Source Voltage (VGS = 0 V) VDSS
20
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) ∗1
Drain Current (pulse) ∗2
Total Power Dissipation (2 unit) ∗1
VGSS
ID(DC)
ID(pulse)
PT1
±12
±6.5
±60
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg −55 to +150
Notes: ∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗2. PW ≤ 10 μs, Duty Cycle ≤ 1%
Unit
V
V
A
A
W
°C
°C
R07DS0190EJ0100 Rev.1.00
Dec 06, 2010
Page 1 of 7
 
Revision History
μ PA2465T1Q Data Sheet
Rev.
1.00
Date
Dec 06, 2010
Page
−
First Edition Issued
Description
Summary
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| 页数 | 9 页 | ||
| 下载 | [ UPA2465T1Q.PDF 数据手册 ] | ||
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| UPA2465T1Q | MOS FIELD EFFECT TRANSISTOR | Renesas |
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