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PDF ZXMN10A08E6 ( 数据表 )

零件编号 功能 ( 描述 ) 制造商 PDF
4 ZXMN10A08E6TC   100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench

Diodes
Diodes
PDF
3 ZXMN10A08E6TA   100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench

Diodes
Diodes
PDF
2 ZXMN10A08E6   100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench

Diodes
Diodes
PDF
1 ZXMN10A08E6   100V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure t

Zetex Semiconductors
Zetex Semiconductors
PDF



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