|
|
PDF ZXMN10A08E6 ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
4 | ZXMN10A08E6TC | 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench |
Diodes |
|
3 | ZXMN10A08E6TA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench |
Diodes |
|
2 | ZXMN10A08E6 | 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench |
Diodes |
|
1 | ZXMN10A08E6 | 100V N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure t |
Zetex Semiconductors |
零件编号 | 功能 ( 描述 ) | 制造商 | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
BA6343 | Stepping motor driver |
ROHM |
|
BM63 | Bluetooth 4.2 Stereo Audio Module |
Microchip |
DataSheet8.cn | 2020 | 联系我们 | 0 9 A Z ALL |